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TSM1NB60CW RPG

TSM1NB60CW RPG

Part NumberTSM1NB60CW RPG

ManufacturerTaiwan Semiconductor Corporation

DescriptionMOSFET N-CHANNEL 600V 1A SOT223

DatasheetTSM1NB60

Package / CaseTO-261-4, TO-261AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 1A (Tc) 39W (Tc) Surface Mount SOT-223

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TSM1NB60CW RPG - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TSM1NB60
Standard Package	1
Manufacturer	Taiwan Semiconductor Corporation
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	10Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6.1nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	138pF @ 25V
FET Feature	-
Power Dissipation (Max)	39W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-223
Package / Case	TO-261-4, TO-261AA

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